IRL1404ZPBF International Rectifier, IRL1404ZPBF Datasheet - Page 3

MOSFET N-CH 40V 75A TO-220AB

IRL1404ZPBF

Manufacturer Part Number
IRL1404ZPBF
Description
MOSFET N-CH 40V 75A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRL1404ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.1 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2.7V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 5V
Input Capacitance (ciss) @ Vds
5080pF @ 25V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
200 A
Gate Charge, Total
75 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
230 W
Resistance, Drain To Source On
2.5 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
30 ns
Time, Turn-on Delay
19 ns
Transconductance, Forward
120 S
Voltage, Breakdown, Drain To Source
40 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±16 V
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
200 A
Mounting Style
Through Hole
Gate Charge Qg
75 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRL1404ZPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRL1404ZPBF
Quantity:
9 000
www.irf.com
1000
1000
100
100
1.0
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
0.1
2
3
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 25°C
4
1
5
3.0V
6
V DS = 10V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
T J = 175°C
7
10
TOP
BOTTOM
8
9
VGS
10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
100
10
1000
200
150
100
100
Fig 4. Typical Forward Transconductance
10
Fig 2. Typical Output Characteristics
50
1
0
0.1
0
V DS , Drain-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
50
vs. Drain Current
T J = 25°C
1
3.0V
100
60µs PULSE WIDTH
Tj = 175°C
T J = 175°C
10
TOP
BOTTOM
V DS = 10V
150
VGS
10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
3
200
100

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