IRFB3207ZPBF International Rectifier, IRFB3207ZPBF Datasheet

MOSFET N-CH 75V 120A TO-220AB

IRFB3207ZPBF

Manufacturer Part Number
IRFB3207ZPBF
Description
MOSFET N-CH 75V 120A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFB3207ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.1 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
6920pF @ 50V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
170A
Drain Source Voltage Vds
75V
On Resistance Rds(on)
4.1mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
170 A
Power Dissipation
300 W
Mounting Style
Through Hole
Gate Charge Qg
120 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB3207ZPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFB3207ZPBF
Quantity:
2 500
Company:
Part Number:
IRFB3207ZPBF
Quantity:
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Company:
Part Number:
IRFB3207ZPBF
Quantity:
25 780
Applications
l
l
l
l
Benefits
l
l
l
www.irf.com
Absolute Maximum Ratings
I
I
I
I
P
V
dv/dt
T
T
Avalanche Characteristics
E
I
E
Thermal Resistance
R
R
R
R
D
D
D
DM
AR
D
GS
J
STG
AS (Thermally limited)
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
High Efficiency Synchronous Rectification in
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche SOA
Enhanced body diode dV/dt and dI/dt
Capability
SMPS
@T
Symbol
Symbol
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Single Pulse Avalanche Energy e
Avalanche Current d
Repetitive Avalanche Energy g
Junction-to-Case k
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220 k
Junction-to-Ambient (PCB Mount) , D
Parameter
Parameter
GS
GS
@ 10V (Silicon Limited)
@ 10V (Wire Bond Limited)
2
Pak jk
G
D
IRFB3207ZPbF
S
D
TO-220AB
Gate
G
G
V
R
I
I
D (Silicon Limited)
D (Package Limited)
D
DSS
DS(on)
S
Typ.
See Fig. 14, 15, 22a, 22b
0.50
–––
–––
–––
IRFSL3207ZPbF
10lbxin (1.1Nxm)
IRFB3207ZPbF
IRFS3207ZPbF
-55 to + 175
typ.
max.
IRFS3207ZPbF
170c
120c
Max.
D
± 20
120
670
300
300
170
2.0
HEXFET Power MOSFET
Drain
16
D
D
2
Pak
G
Max.
0.50
–––
62
40
S
170A c
3.3m:
4.1m:
Source
120A
IRFSL3207ZPbF
75V
D
S
TO-262
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
04/07/08
G
D
S
1

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IRFB3207ZPBF Summary of contents

Page 1

... (Silicon Limited (Package Limited TO-220AB IRFB3207ZPbF G Gate @ 10V (Silicon Limited 10V (Wire Bond Limited) GS See Fig. 14, 15, 22a, 22b Typ. 0.50 2 Pak jk IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF HEXFET Power MOSFET 75V typ. 3.3m: max. 4.1m: 170A c 120A Pak TO-262 IRFS3207ZPbF IRFSL3207ZPbF D S Drain Source Max ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) R Internal Gate Resistance G(int) I ...

Page 3

VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V 100 4.5V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

175°C 100 25° 0.1 0.0 0.5 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 180 Limited By Package 160 140 120 100 80 60 ...

Page 5

D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 100 0.01 0.05 10 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, ...

Page 6

150µA 2 250µA 1 1.0mA 1.0A 1.0 0.5 -75 -50 - 100 125 150 175 200 ...

Page 7

D.U.T + ƒ ‚ -  R • • • SD • Fig 20 D.U 20V V GS 0.01 Ω Fig 21a. Unclamped Inductive Test Circuit ...

Page 8

Y6HQG ) UCDTÃDTÃ6IÃDSA  Ã GPUÃ8P9 Ã &'( 6TT H7G 9ÃPIÃXXÃ (Ã ((& DIÃUC Ã6TT H7G`ÃGDI ÃÅ8Å Note: "P" in assembly line position indicates "Lead-Free" TO-220AB packages are not recommended for Surface Mount Application. 8 DIU SI6UDPI6G S 8UDAD S ...

Page 9

UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ 25 www.irf.com DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S 6U@Ã8P @ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG Q6SUÃIVH7@S 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ QSP V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! ...

Page 10

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å DIU@SI6UDPI6 S@8UDAD@S PBP 6TT@H7 ` PUÃ8P9@ DIU@SI6UDPI6 S@8UDAD@S PBP 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃ ...

Page 11

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD ...

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