IRFB3206PBF International Rectifier, IRFB3206PBF Datasheet

IRFB3206PBF

Manufacturer Part Number

IRFB3206PBF

Description

MOSFET N-CH 60V 120A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFSL3206PBF.pdf (11 pages)

Specifications of IRFB3206PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

3 mOhm @ 75A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

120A

Vgs(th) (max) @ Id

4V @ 150µA

Gate Charge (qg) @ Vgs

170nC @ 10V

Input Capacitance (ciss) @ Vds

6540pF @ 50V

Power - Max

300W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

210 A

Power Dissipation

300 W

Mounting Style

Through Hole

Gate Charge Qg

120 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFB3206PBF

Manufacturer:

Quantity:

7 000

Company:

BOSTOCK HK LIMITED

Part Number:

IRFB3206PBF

Manufacturer:

Quantity:

8 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFB3206PBF

Manufacturer:

IR/国际整流器

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IRFB3206PBF

Company:

H&T Electronics

Part Number:

IRFB3206PBF

Quantity:

3 000

Company:

H&T Electronics

Part Number:

IRFB3206PBF

Quantity:

16 000

Current page: 1 of 11
Download datasheet (443Kb)

Benefits

Applications

www.irf.com

dv/dt

Absolute Maximum Ratings

Avalanche Characteristics

Thermal Resistance

STG

AS (Thermally limited)

θJC

θCS

θJA

@ T

High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Fully Characterized Capacitance and Avalanche

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

SOA

Symbol

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current d

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery f

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Single Pulse Avalanche Energy e

Avalanche Current d

Repetitive Avalanche Energy g

Junction-to-Case k

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220 k

Junction-to-Ambient (PCB Mount) , D

Parameter

@ 10V (Silicon Limited)

@ 10V (Wire Bond Limited)

Pak jk

IRFB3206PbF

TO-220AB

Gate

See Fig. 14, 15, 22a, 22b,

Typ.

0.50

–––

10lbxin (1.1Nxm)

DSS

DS(on)

(Silicon Limited)

(Package Limited)

-55 to + 175

IRFS3206PbF

Drain

HEXFET Power MOSFET

210c

150c

Max.

120

840

300

± 20

300

170

2.0

5.0

Pak

IRFSL3206PbF

typ.

max.

IRFB3206PbF

IRFS3206PbF

Max.

0.50

–––

IRFSL3206PbF

Source

210A c

TO-262

2.4m :

3.0m :

120A

60V

Units

W/°C

°C/W

V/ns

°C

4/7/08

Related parts for IRFB3206PBF

IRFB3206PBF Summary of contents

Page 1

... Junction-to-Ambient, TO-220 k θJA R Junction-to-Ambient (PCB Mount θJA www.irf.com G D TO-220AB IRFB3206PbF G Gate Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Wire Bond Limited) GS Parameter 2 Pak jk IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET V D DSS R typ. DS(on) max. I 210A c D (Silicon Limited) I (Package Limited ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V 100 4.5V ≤ 60μs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

175°C 100 25° 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 240 Limited By Package 200 160 120 ...

Page 5

D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 100 0.01 0.05 0.10 10 Allowed ...

Page 6

Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature 100 200 300 ...

Page 7

D.U.T + ƒ ‚ - • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ...

Page 8

EXAMPLE: T HIS IS AN IRF 1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" TO-220AB packages ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L www.irf.com (Dimensions are shown in millimeters (inches)) LOT CODE 1789 INT ERNATIONAL ASS EMBLED ON WW 19, 1997 RECTIFIER SEMBLY LINE "C" LOGO ASSEMBLY ...

Page 10

T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" T HIS IS AN IRF530S WIT H LOT CODE 8024 For GB Production ...

Page 11

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 ...

Related keywords

irfb3307
irfb3207
irfb3307z
irfb3306
irfb3206
irfb3077
irfb3306pbf
irfb3206pbf
irfb31n20d
irfb3006pbf
IRFB3206PBF datasheet
IRFB3206PBF data sheet
IRFB3206PBF pdf datasheet
IRFB3206PBF component
IRFB3206PBF part
IRFB3206PBF distributor
IRFB3206PBF RoHS
IRFB3206PBF datasheet download