IRF2804S-7PPBF International Rectifier, IRF2804S-7PPBF Datasheet

MOSFET N-CH 40V 160A D2PAK-7

IRF2804S-7PPBF

Manufacturer Part Number
IRF2804S-7PPBF
Description
MOSFET N-CH 40V 160A D2PAK-7
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF2804S-7PPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.6 mOhm @ 160A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
6930pF @ 25V
Power - Max
330W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q3453559
Features
l
l
l
l
l
l
Description
This HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
HEXFET
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
JC
CS
JA
JA
@ T
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
@T
(tested)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
®
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
j
j
Parameter
Parameter
GS
GS
GS
g
@ 10V (Silicon Limited)
@ 10V (See Fig. 9)
@ 10V
(Package Limited)
h
G
ij
IRF2804S-7PPbF
d
300 (1.6mm from case )
HEXFET
See Fig.12a,12b,15,16
Typ.
D
S
0.50
–––
–––
–––
10 lbf•in (1.1N•m)
-55 to + 175
Max.
1360
1050
320
230
160
330
± 20
630
2.2
®
R
Power MOSFET
DS(on)
Max.
0.50
V
–––
62
40
I
DSS
D
= 160A
PD - 97057A
= 1.6m
= 40V
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRF2804S-7PPBF Summary of contents

Page 1

... Mounting torque, 6- screw Thermal Resistance j Junction-to-Case R JC Case-to-Sink, Flat, Greased Surface R CS Junction-to-Ambient R JA Junction-to-Ambient (PCB Mount, steady state ® HEXFET is a registered trademark of International Rectifier. www.irf.com IRF2804S-7PPbF G Parameter @ 10V (Silicon Limited 10V (See Fig 10V (Package Limited Parameter 97057A ® HEXFET ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient DSS J R SMD Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 1000 5.0V BOTTOM 4.5V 100 60µs PULSE WIDTH 4. 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100 ...

Page 4

0V MHZ C iss = SHORTED 12000 C rss = oss = 10000 8000 Ciss 6000 4000 ...

Page 5

LIMITED BY PACKAGE 300 250 200 150 100 100 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 1000 0.01 100 0.05 0. 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 800 TOP Single Pulse BOTTOM 1% Duty Cycle 160A 600 400 200 ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

... D Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches Pak - 7 Pin Part Marking Information Notes: 1. For an Automotive Qualified version of this part please see 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com IR http://www.irf.com/product-info/datasheets/data/ auirf2804s-7p.pdf 9 ...

Page 10

D Pak - 7 Pin Tape and Reel IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 10 Data and specifications subject to change without notice. This product has been designed and qualified for ...

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