IXTH500N04T2 IXYS, IXTH500N04T2 Datasheet - Page 2

• Manufacturer Part Number: IXTH500N04T2
• Description: MOSFET N-CH 40V 500A TO-247
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTH500N04T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 500A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 405nC @ 10V
• Input Capacitance (ciss) @ Vds: 25000pF @ 25V
• Power - Max: 1000W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 40
• Id(cont), Tc=25°c, (a): 500
• Rds(on), Max, Tj=25°c, (?): 0.0016
• Ciss, Typ, (pf): 25000
• Qg, Typ, (nc): 405
• Trr, Typ, (ns): 84
• Pd, (w): 1000
• Rthjc, Max, (k/w): 0.15
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCH
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Includes lead resistance.
V
Repetitive, Pulse Width Limited by T
V
V
I
Test Conditions
Gate Input Resistance
Resistive Switching Times
V
R
TO-247
Test Conditions
I
-di/dt = 100A/μs
V
V
F
F
DS
GS
GS
GS
R
G
GS
= 100A, V
= 100A, V
= 20V
= 10V, I
= 0V, V
= 0V
= 10V, V
= 1Ω (External)
= 10V, V
ADVANCE TECHNICAL INFORMATION
DS
D
GS
GS
DS
= 60A, Note 1
DS
= 25V, f = 1MHz
= 0V, Note 1
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 200A
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
Min.
75
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
4410
Typ.
Typ.
970
405
105
118
0.21
125
130
1.1
3.1
68
25
37
16
84
44
Max.
Max.
1500
0.15 °C/W
500
1.2
6,404,065 B1
6,534,343
6,583,505
°C/W
nC
nC
nC
nF
pF
pF
nC
ns
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 (IXTT) Outline
TO-247 (IXTH) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
IXTH500N04T2
IXTT500N04T2
3 - Source
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
2 - Drain
Tab - Drain
0.205 0.225
0.232 0.252
∅ P
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216