IXTH500N04T2 IXYS, IXTH500N04T2 Datasheet - Page 3

• Manufacturer Part Number: IXTH500N04T2
• Description: MOSFET N-CH 40V 500A TO-247
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTH500N04T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 500A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 405nC @ 10V
• Input Capacitance (ciss) @ Vds: 25000pF @ 25V
• Power - Max: 1000W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 40
• Id(cont), Tc=25°c, (a): 500
• Rds(on), Max, Tj=25°c, (?): 0.0016
• Ciss, Typ, (pf): 25000
• Qg, Typ, (nc): 405
• Trr, Typ, (ns): 84
• Pd, (w): 1000
• Rthjc, Max, (k/w): 0.15
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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350
300
250
200
150
100
320
280
240
200
160
120
2.0
1.8
1.6
1.4
1.2
1.0
0.8
50
80
40
0
0
0.0
0.0
0
V
GS
0.1
50
= 10V
Fig. 5. R
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
15V
0.1
0.2
100
DS(on)
0.3
V
150
GS
Normalized vs. Drain Current
0.2
0.4
= 15V
I
10V
V
8V
V
D
DS
DS
- Amperes
V
GS
200
- Volts
0.5
- Volts
= 15V
10V
9V
8V
0.3
0.6
250
T
T
0.7
J
J
= 175ºC
= 25ºC
J
300
J
= 150ºC
5V
4V
3V
7V
6V
= 25ºC
0.4
0.8
7V
6V
5V
4V
350
0.9
0.5
400
1.0
400
350
300
250
200
150
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
180
160
140
120
100
50
80
60
40
20
0
0
-50
0.0
-50
V
GS
Fig. 2. Extended Output Characteristics @ T
V
I
Fig. 4. R
D
GS
10V
= 15V
< 500A
8V
7V
-25
-25
= 10V
Fig. 6. Drain Current vs. Case Temperature
0.5
DS(on)
0
0
External Lead Current limit
6V
5V
4V
Normalized vs. Junction Temperature
T
25
C
25
T
- Degrees Centigrade
J
- Degrees Centigrade
1.0
50
V
50
DS
- Volts
75
75
IXTH500N04T2
IXTT500N04T2
1.5
100
100
125
125
2.0
J
150
= 25ºC
150
175
175
2.5