IXTH500N04T2 IXYS, IXTH500N04T2 Datasheet - Page 4

• Manufacturer Part Number: IXTH500N04T2
• Description: MOSFET N-CH 40V 500A TO-247
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTH500N04T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 500A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 405nC @ 10V
• Input Capacitance (ciss) @ Vds: 25000pF @ 25V
• Power - Max: 1000W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 40
• Id(cont), Tc=25°c, (a): 500
• Rds(on), Max, Tj=25°c, (?): 0.0016
• Ciss, Typ, (pf): 25000
• Qg, Typ, (nc): 405
• Trr, Typ, (ns): 84
• Pd, (w): 1000
• Rthjc, Max, (k/w): 0.15
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
250
200
150
100
350
300
250
200
150
100
100
50
50
0
0
2.0
0.3
0
f
= 1 MHz
0.4
5
2.5
Fig. 9. Forward Voltage Drop of
0.5
10
3.0
Fig. 7. Input Admittance
T
J
Fig. 11. Capacitance
= 150ºC
- 40ºC
0.6
15
T
25ºC
Intrinsic Diode
J
V
= 150ºC
3.5
GS
V
V
SD
DS
- Volts
0.7
- Volts
20
- Volts
4.0
0.8
25
T
4.5
J
= 25ºC
0.9
30
C iss
C oss
C rss
5.0
1.0
35
5.5
1.1
40
10,000
1,000
240
200
160
120
100
10
80
40
10
9
8
7
6
5
4
3
2
1
0
0
1
0.1
0
0
V
I
I
T
T
Single Pulse
20
D
G
DS
J
C
= 250A
= 10mA
= 175ºC
= 25ºC
50
= 20V
Fig. 12. Forward-Bias Safe Operating Area
40
100
60
R
DS(on)
Fig. 8. Transconductance
80
External Lead Limit
Fig. 10. Gate Charge
150
1
Limit
Q
100
G
I
- NanoCoulombs
D
V
120
- Amperes
200
DS
- Volts
140
IXTH500N04T2
IXTT500N04T2
250
160
10
180
300
T
200
J
= - 40ºC
150ºC
350
25ºC
DC
220
25µs
100µs
1ms
10ms
100ms
240
400
260
100