MOSFET N-CH 150V 150A TO-247

IXFH150N15P

Manufacturer Part NumberIXFH150N15P
DescriptionMOSFET N-CH 150V 150A TO-247
ManufacturerIXYS
SeriesPolarHT™
IXFH150N15P datasheet
 


Specifications of IXFH150N15P

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs13 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)150V
Current - Continuous Drain (id) @ 25° C150AVgs(th) (max) @ Id5V @ 4mA
Gate Charge (qg) @ Vgs190nC @ 10VInput Capacitance (ciss) @ Vds5800pF @ 25V
Power - Max714WMounting TypeThrough Hole
Package / CaseTO-247ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.013 Ohms
Drain-source Breakdown Voltage150 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current150 APower Dissipation714 W
Maximum Operating Temperature+ 175 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CVdss, Max, (v)150
Id(cont), Tc=25°c, (a)150Rds(on), Max, Tj=25°c, (?)0.013
Ciss, Typ, (pf)5800Qg, Typ, (nc)190
Trr, Typ, (ns)-Trr, Max, (ns)200
Pd, (w)714Rthjc, Max, (ºc/w)0.21
Package StyleTO-247Lead Free Status / RoHS StatusLead free / RoHS Compliant
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PolarHT
HiPerFET
TM
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
Test Conditions
V
T
= 25° C to 175° C
DSS
J
V
T
= 25° C to 175° C; R
DGR
J
V
Continuous
GS
V
Transient
GSM
I
T
= 25° C
D25
C
I
External lead current limit
D(RMS)
I
T
= 25° C, pulse width limited by T
DM
C
I
T
= 25° C
AR
C
E
T
= 25° C
AR
C
E
T
= 25° C
AS
C
≤ I
, di/dt ≤ 100 A/µs, V
dv/dt
I
S
DM
≤ 175° C, R
= 4 Ω
T
J
G
P
T
= 25° C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10 s
L
M
Mounting torque
d
Weight
TO-3P
TO-264
Symbol
Test Conditions
(T
= 25° C, unless otherwise specified)
J
= 250 µA
BV
V
= 0 V, I
DSS
GS
D
V
V
= V
, I
= 4 mA
GS(th)
DS
GS
D
= ±20 V
I
V
, V
= 0
GSS
GS
DC
DS
I
V
= V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 0.5 I
DS(on)
GS
D
D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
IXFH 150N15P
IXFK 150N15P
Maximum Ratings
150
= 1 MΩ
150
GS
±20
±30
150
75
340
JM
60
80
2.5
≤ V
,
10
DD
DSS
714
-55 ... +175
175
-55 ... +175
300
1.13/10 Nm/lb.in.
5.5
10
Characteristic Values
Min.
Typ.
150
3.0
±100
T
= 175° C
1000
J
V
= 150
DSS
I
= 150
D25
≤ ≤ ≤ ≤ ≤
13 m Ω Ω Ω Ω Ω
R
DS(on)
≤ ≤ ≤ ≤ ≤ 200 ns
t
rr
TO-247 (IXFH)
V
V
V
V
G
D
S
A
A
A
TO-264 (IXFK)
A
mJ
J
V/ns
G
D
S
W
°C
G = Gate
D = Drain
S = Source
TAB = Drain
°C
°C
Features
°C
l
Fast Intrinsic Diode
l
International standard packages
g
l
Unclamped Inductive Switching (UIS)
g
rated
l
Low package inductance
- easy to drive and to protect
Max.
Advantages
V
l
Easy to mount
5.0
V
l
Space savings
l
High power density
nA
µA
25
µA
m Ω
13
V
A
(TAB)
(TAB)
DS99328E(03/06)

IXFH150N15P Summary of contents

  • Page 1

    ... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 150N15P IXFK 150N15P Maximum Ratings 150 = 1 MΩ 150 GS ±20 ±30 150 75 340 2.5 ≤ DSS 714 -55 ... +175 175 -55 ... +175 300 1 ...

  • Page 2

    ... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. , pulse test ...

  • Page 3

    ... Norm alized to 0.5 I DS(on) Value vs. Drain Current 3.4 3.1 2.8 2.5 2.2 1 15V GS 1.6 1 100 150 I - Amperes D © 2006 IXYS All rights reserved º C 330 300 270 240 7V 210 180 6V 150 120 1.2 1.4 1.6 1.8 2 º C 2.8 2.6 2 ...

  • Page 4

    ... T = 150 0.4 0.6 0 Volts S D Fig. 11. Capacitance 100,000 f = 1MHz 10,000 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 110 100 7 º 1.2 1.4 1.6 1000 C iss 100 ...

  • Page 5

    ... © 2006 IXYS All rights reserved illis IXFH 150N15P IXFK 150N15P ...