IXFH150N15P IXYS, IXFH150N15P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFH150N15P
Manufacturer Part Number
IXFH150N15P
Description
MOSFET N-CH 150V 150A TO-247
Specifications of IXFH150N15P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
13 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
150A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
5800pF @ 25V
Power - Max
714W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.013 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
150 A
Power Dissipation
714 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
150
Rds(on), Max, Tj=25°c, (?)
0.013
Ciss, Typ, (pf)
5800
Qg, Typ, (nc)
190
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
714
Rthjc, Max, (ºc/w)
0.21
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
GSS
DSS
D25
AR
D(RMS)
DM
© 2006 IXYS All rights reserved
GS(th)
AR
AS
J
JM
stg
L
DS(on)
DSS
DGR
GS
GSM
D
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-3P
TO-264
V
S
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 175° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 4 mA
= 250 µA
, V
G
= 0.5 I
= 4 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 175° C
IXFK 150N15P
IXFH 150N15P
DSS
JM
,
150
Min.
3.0
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
150
150
±20
±30
150
340
714
175
300
2.5
5.5
75
60
80
10
10
±100
1000
Max.
5.0
25
13
V/ns
m Ω
mJ
nA
µA
µA
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
J
g
g
V
I
R
Features
l
l
l
l
Advantages
l
l
l
t
TO-247 (IXFH)
TO-264 (IXFK)
D25
rr
Fast Intrinsic Diode
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DSS
DS(on)
G = Gate
S = Source
G
G
D
D
S
= 150
= 150
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤ 200 ns
S
13 m Ω Ω Ω Ω Ω
D = Drain
TAB = Drain
DS99328E(03/06)
(TAB)
(TAB)
A
V
Related parts for IXFH150N15P
IXFH150N15P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 150N15P IXFK 150N15P Maximum Ratings 150 = 1 MΩ 150 GS ±20 ±30 150 75 340 2.5 ≤ DSS 714 -55 ... +175 175 -55 ... +175 300 1 ...
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. , pulse test ...
... Norm alized to 0.5 I DS(on) Value vs. Drain Current 3.4 3.1 2.8 2.5 2.2 1 15V GS 1.6 1 100 150 I - Amperes D © 2006 IXYS All rights reserved º C 330 300 270 240 7V 210 180 6V 150 120 1.2 1.4 1.6 1.8 2 º C 2.8 2.6 2 ...
... T = 150 0.4 0.6 0 Volts S D Fig. 11. Capacitance 100,000 f = 1MHz 10,000 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 110 100 7 º 1.2 1.4 1.6 1000 C iss 100 ...
... © 2006 IXYS All rights reserved illis IXFH 150N15P IXFK 150N15P ...
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