IXTK100N25P IXYS, IXTK100N25P Datasheet - Page 3

MOSFET N-CH 250V 100A TO-264

IXTK100N25P

Manufacturer Part Number
IXTK100N25P
Description
MOSFET N-CH 250V 100A TO-264
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXTK100N25P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
27 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
185nC @ 10V
Input Capacitance (ciss) @ Vds
6300pF @ 25V
Power - Max
600W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.027 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
100
Rds(on), Max, Tj=25°c, (?)
0.027
Ciss, Typ, (pf)
6300
Qg, Typ, (nc)
185
Trr, Typ, (ns)
200
Pd, (w)
600
Rthjc, Max, (k/w)
0.21
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTK100N25P
Manufacturer:
IXYS
Quantity:
18 000
© 2006 IXYS All rights reserved
100
100
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
1
0
0
0
V
25
GS
0.5
Fig. 3. Output Characte r is tics
1
Fig. 5. R
Fig. 1. Output Char acte r is tics
= 10V
50
0.5 I
V
1
2
75
GS
V
GS
DS(on)
V
D25
I
D
= 10V
100 125 150 175 200 225 250
DS
V
= 10V
@ 125
- A mperes
1.5
9V
8V
DS
@ 25
3
V alue vs . I
9V
8V
- V olts
Nor m alize d to
- V olts
5V
7V
6V
º
º
T
C
2
C
4
J
= 125ºC
5V
7V
6V
2.5
D
T
5
J
= 25ºC
3
6
3.5
7
250
225
200
175
150
125
100
90
80
70
60
50
40
30
20
10
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
75
50
25
0
2
1
0
-50
-50
Fig. 2. Exte nde d Output Char acte ris tics
0
External Lead C urrent Lim it
IXTK 100N25P IXTQ 100N25P
Fig. 4. R
V
V alue vs . Junction Te m pe r atur e
-25
2
-25
GS
Fig. 6. Dr ain Cur r e nt vs . Cas e
= 10V
4
T
0
0
C
T
DS(on
J
- Degrees Centigrade
IXTT 100N25P
6
- Degrees Centigrade
Te m pe r ature
25
I
25
)
D
Norm alize d to 0.5 I
@ 25
8
V
= 100A
DS
50
10
50
- V olts
º
V
C
GS
12
75
75
= 10V
7V
6V
I
9V
8V
D
14
= 50A
100
100
16
D25
125
125
18
150
150
20

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