IXTK100N25P IXYS, IXTK100N25P Datasheet - Page 4

• Manufacturer Part Number: IXTK100N25P
• Description: MOSFET N-CH 250V 100A TO-264
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTK100N25P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 27 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 185nC @ 10V
• Input Capacitance (ciss) @ Vds: 6300pF @ 25V
• Power - Max: 600W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.027 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 100
• Rds(on), Max, Tj=25°c, (?): 0.027
• Ciss, Typ, (pf): 6300
• Qg, Typ, (nc): 185
• Trr, Typ, (ns): 200
• Pd, (w): 600
• Rthjc, Max, (k/w): 0.21
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
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150
125
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100
75
50
25
50
0
0
0.4
4
0
f = 1MH z
4.5
5
0.6
T
Fig. 11. Capacitance
T
Fig. 7. Input Adm ittance
Fig. 9. Source Cur r e nt vs .
J
Sour ce -To-Drain V oltage
J
= 125ºC
10
= 125ºC
5
-40ºC
25ºC
0.8
5.5
V
15
V
V
GS
SD
DS
- V olts
- V olts
20
- V olts
6
T
J
1
= 25ºC
6.5
C os s
C rs s
25
C is s
1.2
30
7
7.5
35
1.4
40
8
1000
100
10
90
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T
R
IXTK 100N25P IXTQ 100N25P
J
V
I
I
DS (on)
= -40ºC
D
G
20
125ºC
DS
25
= 50A
= 10m A
25ºC
Fig. 8. Trans conductance
= 125V
40
Lim it
Fig. 10. Gate Charge
D C
Fig. 12. For w ar d-Bias
50
Safe Ope r ating Are a
60
Q
G
10m s
75
I
- nanoCoulombs
D
80
V
- A mperes
DS
1m s
100
100 120 140 160 180 200
100
- V olts
100µs
IXTT 100N25P
125
150
25µs
T
T
J
C
= 150ºC
= 25ºC
175
1000
200