IXTK100N25P IXYS, IXTK100N25P Datasheet - Page 5

• Manufacturer Part Number: IXTK100N25P
• Description: MOSFET N-CH 250V 100A TO-264
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTK100N25P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 27 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 185nC @ 10V
• Input Capacitance (ciss) @ Vds: 6300pF @ 25V
• Power - Max: 600W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.027 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 100
• Rds(on), Max, Tj=25°c, (?): 0.027
• Ciss, Typ, (pf): 6300
• Qg, Typ, (nc): 185
• Trr, Typ, (ns): 200
• Pd, (w): 600
• Rthjc, Max, (k/w): 0.21
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTK 100N25P IXTQ 100N25P
IXTT 100N25P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
1.00
0.10
0.01
1
10
100
1000
Pulse Width - milliseconds
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