IXFT30N50Q IXYS, IXFT30N50Q Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFT30N50Q
Manufacturer Part Number
IXFT30N50Q
Description
MOSFET N-CH 500V 30A TO-268
Specifications of IXFT30N50Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
4925pF @ 25V
Power - Max
360W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
V
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
© 2001 IXYS All rights reserved
HiPerFET
Power MOSFETs
Q-Class
DM
GSS
DSS
D25
AR
N-Channel Enhancement Mode
Avalanche Rated, Low Q
JM
L
GS(th)
GSM
AR
J
stg
DSS
DS(on)
DSS
DGR
GS
AS
D
d
Test Conditions
V
V
V
V
V
V
Note 1
Test Conditions
T
T
Continuous
Transient
T
T
pulse width limited by T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
S
GS
GS
GS
GS
C
C
C
C
C
DS
DS
J
J
J
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C,
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
TM
GS
DSS
, di/dt 100 A/ s, V
, I
D
D
DC
D
= 250 uA
= 4 mA
, V
= 0.5 I
G
= 2
DS
g
= 0
, High dv/dt
D25
GS
JM
= 1 M
DD
(T
T
T
30N50Q
32N50Q
J
J
J
V
= 25 C
= 125 C
30N50Q
32N50Q
30N50Q
32N50Q
= 25 C, unless otherwise specified)
DSS
IXFH/IXFT 30N50Q
IXFH/IXFT 32N50Q
,
500
min.
2.5
-55 ... + 150
-55 ... + 150
Characteristic Values
1.13/10
1500
Maximum Ratings
150
typ.
500
500
120
128
360
300
45
20
30
30
32
32
5
6
4
0.16
0.15
100
100
max.
4.5
Nm/lb.in.
1
V/ns
mJ
mJ
mA
W
nA
C
C
C
C
V
V
V
V
V
V
A
A
A
A
A
g
g
A
500 V 30 A 0.16
500 V 32 A 0.15
Features
l
l
l
l
l
l
Advantages
l
l
l
TO-268 (D3) ( IXFT)
G = Gate
S = Source
TO-247 AD (IXFH)
t
V
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
rr
Easy to mount
Space savings
High power density
DSS
250 ns
DS (on)
G
I
D25
S
TAB = Drain
D
g
= Drain
process
R
98596D (03/01)
DS(on)
(TAB)
Related parts for IXFT30N50Q
IXFT30N50Q Summary of contents
... GS(th GSS DSS DS DSS 0.5 I DS(on D25 Note 1 © 2001 IXYS All rights reserved IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q Maximum Ratings 500 = 1 M 500 30N50Q 30 32N50Q 32 30N50Q 120 32N50Q 128 1500 DSS 360 -55 ... + 150 150 -55 ... + 150 300 1.13/ Characteristic Values ( unless otherwise specified) J min ...
... Note 1: Pulse test, t 300 s, duty cycle d IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXFH 30N50Q IXFT 30N50Q Characteristic Values ( unless otherwise specified) J min. typ. ...
... DS(on) 2 10V GS 2.4 0 Tj=125 C 2.0 1.6 1.2 0 Amperes D Figure 5. Drain Current vs. Case Temperature 40 IXF_32N50Q 32 IXF_30N50Q -50 - Degrees C C © 2001 IXYS All rights reserved IXFH 30N50Q IXFT 30N50Q vs Tj= 100 125 150 IXFH 32N50Q IXFT 32N50Q Figure 2. Output Characteristics at 125 125 ...
... Volts SD Figure 10. Transient Thermal Resistance 0.40 0.20 0.10 0.08 0.06 0.04 0.02 0. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 10000 1000 100 200 250 O O =25 = 1.0 1 ...
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