IXFT30N50Q IXYS, IXFT30N50Q Datasheet - Page 4

• Manufacturer Part Number: IXFT30N50Q
• Description: MOSFET N-CH 500V 30A TO-268
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFT30N50Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 4925pF @ 25V
• Power - Max: 360W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
100
14
12
10
80
60
40
20
8
6
4
2
0
0
0.4
0.40
0.20
0.10
0.08
0.06
0.04
0.02
0.01
0
Figure 7. Gate Charge
Figure 9. Forward Voltage Drop of the
V
10
GS
Figure 10. Transient Thermal Resistance
-3
= 0V
Vds=300V
50
I
I
D
G
=16A
=10mA
0.6
Intrinsic Diode
Gate Charge - nC
T
J
=125
100
V
SD
O
C
- Volts
0.8
150
T
T
J
J
=25
=25
O
O
10
C
C
1.0
-2
200
250
1.2
Pulse Width - Seconds
4,835,592
4,850,072
10
-1
10000
1000
100
IXFH 30N50Q
IXFT 30N50Q
4,881,106
4,931,844
0
Figure 8. Capacitance Curves
5
5,017,508
5,034,796
Coss
Ciss
Crss
10
V
10
DS
0
- Volts
5,049,961
5,063,307
15
IXFH 32N50Q
IXFT 32N50Q
5,187,117
5,237,481
F = 1MHz
F = 1MHz
20
5,486,715
5,381,025
25
10
1