IXFT30N50Q IXYS, IXFT30N50Q Datasheet - Page 3

• Manufacturer Part Number: IXFT30N50Q
• Description: MOSFET N-CH 500V 30A TO-268
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFT30N50Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 4925pF @ 25V
• Power - Max: 360W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2001 IXYS All rights reserved
Figure 1. Output Characteristics at 25
Figure 5. Drain Current vs. Case Temperature
Figure 3. R
2.8
2.4
2.0
1.6
1.2
0.8
80
70
60
50
40
30
20
10
40
32
24
16
0
8
0
-50
0
0
IXF_30N50Q
V
T
-25
GS
J
10
= 25
DS(on)
= 10V
IXF_32N50Q
4
O
C
0
normalized to 15A/25
20
T
I
D
25
C
Tj=125
V
8
- Amperes
- Degrees C
DS
V
GS
- Volts
30
=10V
50
0
9V
8V
7V
C
12
Tj=25
75
40
0
100 125 150
C
16
50
O
O
C
C vs. I
6V
5V
60
20
D
IXFH 30N50Q
IXFT 30N50Q
Figure 2. Output Characteristics at 125
50
40
30
20
10
50
40
30
20
10
2.8
2.4
2.0
1.6
1.2
0.8
Figure 4. R
0
0
Figure 6. Admittance Curves
2
25
0
V
T
GS
J
= 125
= 10V
4
50
DS(on)
3
O
C
T
J
normalized to 15A/25
T
= 125
J
V
V
8
75
- Degrees C
GS
DS
I
o
D
C
- Volts
- Volts
= 32A
V
4
GS
IXFH 32N50Q
IXFT 32N50Q
= 9V
100
12
8V
7V
I
D
= 16A
5
16
125
T
J
= 25
O
O
C vs. T
C
o
5V
4V
6V
C
20
150
6
J