2SJ681(Q) Toshiba, 2SJ681(Q) Datasheet - Page 3

• Manufacturer Part Number: 2SJ681(Q)
• Description: MOSFET P-CH 60V 5A PW-MOLD
• Manufacturer: Toshiba

Specifications of 2SJ681(Q)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 10V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: 2-7J2B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
−10
0.1
−5
−4
−3
−2
−1
10
−8
−6
−4
−2
−0.1
0
0
1
0
0
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
−8
Drain−source voltage V
Gate−source voltage V
−0.4
−10
−1
Drain current I
−6
25
−1
Tc = −55°C
−0.8
100
−2
⎪Y
−4.
I
I
D
D
fs
– V
– V
⎪ − I
−3.5
25
GS
DS
−1.2
100
Tc = −55°C
−3
D
D
−10
GS
(A)
DS
Common source
Tc = 25°C
Pulse test
V GS = −2.5V
−1.6
−4
(V)
(V)
−2.8
−3
−100
−2.0
−5
3
−2.0
−1.6
−1.2
−0.8
−0.4
−10
0.5
0.4
0.3
0.2
0.1
−8
−6
−4
−2
0
0
0
0
0
0
−8
−10
Common source
Tc = 25°C
Pulse test
Drain−source voltage V
−6
Gate−source voltage V
−2
−4
−2
−4
Drain current I
R
V
−4
−8
−4
DS (ON)
I
DS
D
– V
– V
−3.5
DS
V GS = −10V
GS
− I
−12
−6
−6
D
D
−4 V
GS
(A)
DS
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
V GS = −2.5 V
−16
−8
−8
(V)
(V)
I D = −1.2 A
2010-03-01
−3
−2.5
2SJ681
−5
−10
−20
−10