2SJ681(Q) Toshiba, 2SJ681(Q) Datasheet - Page 4

• Manufacturer Part Number: 2SJ681(Q)
• Description: MOSFET P-CH 60V 5A PW-MOLD
• Manufacturer: Toshiba

Specifications of 2SJ681(Q)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 10V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: 2-7J2B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
0.2
0.1
0.4
0.3
100
30
20
10
−80
40
0
10
0
−0.1
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
V GS = −4 V
−40
Drain−source voltage V
40
V GS = −10 V
Case temperature Tc (°C)
Case temperature Tc (°C)
Capacitance – V
0
−1
R
DS (ON)
80
P
D
40
− Tc
− Tc
120
−1.2
−2.5
80
−10
DS
−2.5
DS
I D = −5 A
160
−5
120
C iss
(V)
C oss
C rss
−1.2
−100
160
200
4
−2.0
−1.6
−1.2
−0.8
−0.1
−0.4
−50
−10
−40
−30
−20
−10
−1
0
−80
0
0
0
Common source
Tc = 25°C
Pulse test
Dynamic Input/Output Characteristics
V DS
−40
0.2
Drain−source voltage V
5
Total gate charge Q
Case temperature Tc (°C)
−12V
V GS
10
0.4
0
V DD = −48 V
I
−5
V
DR
th
40
15
0.6
− Tc
− V
−1
−3
DS
−10
−24V
20
80
0.8
g
Common source
I D = −5 A
Ta = 25°C
Pulse test
Common source
V DS = −10 V
I D = −1 mA
Pulse test
DS
V GS = 0 V
(nC)
120
25
1.0
(V)
2010-03-01
2SJ681
160
30
1.2
−25
−20
−15
−10
−5
0