2SK2989(F) Toshiba, 2SK2989(F) Datasheet

MOSFET N-CH 50V 5A TO-92

2SK2989(F)

Manufacturer Part Number
2SK2989(F)
Description
MOSFET N-CH 50V 5A TO-92
Manufacturer
Toshiba
Datasheet

Specifications of 2SK2989(F)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
2.2V @ 1mA
Gate Charge (qg) @ Vgs
6.5nC @ 10V
Input Capacitance (ciss) @ Vds
145pF @ 10V
Power - Max
900mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement−mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to ambient
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
GS
DC
Pulse (Note 1)
= 20 kΩ)
: I
: V
DSS
th
(Note 1)
= 1.0 to 2.2 V (V
= 100 μA (max) (V
(Ta = 25°C)
Symbol
: R
: |Y
V
V
V
T
I
T
DGR
P
GSS
DSS
I
DP
R
stg
D
ch
Symbol
D
DS (ON)
2SK2989
th (ch−a)
fs
| = 2.6 S (typ.)
DS
= 10 V, I
DS
= 120 mΩ (typ.)
−55 to 150
= 50 V)
Rating
±20
150
0.9
50
50
15
5
1
D
Max
138
= 1 mA)
°C / W
Unit
Unit
°C
°C
W
V
V
V
A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
TO-92MOD
2-5J1C
2009-09-29
2SK2989
Unit: mm

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2SK2989(F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

I – Common source 25°C 3 Pulse Test 0.4 0.8 1.2 1.6 Drain-source voltage V DS (V) I – V ...

Page 4

(ON) 1.0 Common source Pulse Test 0.8 0.6 1 0.2 2.5 1 −80 − 120 Ambient ...

Page 5

SAFE OPERATING AREA 100 I max (pulse max (continuous OPEATION 1 T =25°C a ※ Single pulse 0.1 Ta=25℃ Curves must be derated linearly V DSS max with increase in temperature. 0.01 ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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