2SK2989(F) Toshiba, 2SK2989(F) Datasheet - Page 4

• Manufacturer Part Number: 2SK2989(F)
• Description: MOSFET N-CH 50V 5A TO-92
• Manufacturer: Toshiba

Specifications of 2SK2989(F)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.2V @ 1mA
• Gate Charge (qg) @ Vgs: 6.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 145pF @ 10V
• Power - Max: 900mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.0
0.8
0.6
0.4
0.2
1.6
1.2
0.8
0.4
1000
0
−80
0
100
10
0
1
0.1
Common source
Pulse Test
−40
V GS = 4 V
Ambient temperature Ta (°C)
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
40
Capacitance – V
0
V GS = 10 V
R
1
DS (ON)
P
D
40
80
− Ta
I D = 2.5A
− Ta
80
DS
1.3
10
120
1.3
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
5
120
2.5
C iss
C rss
C oss
160
160
100
4
100
0.1
80
60
40
20
10
4
3
2
1
0
−80
0
1
0
0
Common source
I D = 5 A
Ta = 25°C
Pulse Test
Common source
Ta = 25°C
Pulse Test
10
V DS
−40
Drain-source voltage V DS (V)
2
5
−0.4
Ambient temperature Ta (°C)
Dynamic input / output
Total gate charge Q g (nC)
3
1
0
characteristics
4
I
V
DR
V GS
th
10V
−0.8
40
− Ta
− V
V GS = 0 V
DS
6
Common source
V DS = 10 V
I D = 1mA
Pulse Test
80
20V
−1.2
V DD = 40V
120
8
2009-09-29
2SK2989
−1.6
160
10
20
15
10
5
0