TPCA8020-H(TE12LQM Toshiba, TPCA8020-H(TE12LQM Datasheet

TPCA8020-H(TE12LQM

Manufacturer Part Number

TPCA8020-H(TE12LQM

Description

MOSFET N-CH 40V 7.5A SOP-8 ADV

Manufacturer

Toshiba

Datasheet

1.TPCA8020-HTE12LQM.pdf (7 pages)

Specifications of TPCA8020-H(TE12LQM

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

27 mOhm @ 3.8A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

7.5A

Vgs(th) (max) @ Id

2.3V @ 1mA

Gate Charge (qg) @ Vgs

11nC @ 10V

Input Capacitance (ciss) @ Vds

650pF @ 10V

Power - Max

30W

Mounting Type

Surface Mount

Package / Case

2-5Q1A

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.027 Ohms

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

7.5 A

Power Dissipation

2.8 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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High-Efficiency DC／DC Converter Applications

Notebook PC Applications

Portable Equipment Applications

CCFL Inverter Applications

Absolute Maximum Ratings

Small footprint due to a small and thin package

High speed switching

Small gate charge: Q

Low drain−source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc=25°C)

Drain power dissipation

(t = 10 s)

Drain power dissipation

(t = 10 s)

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Single-device value at dual operation

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

D C

Pulse

= 20 kΩ)

(Note 2a, 4)

DSS

(Note 2a)

(Note 2b)

= 3.5 nC (typ.)

= 1.1 to 2.3 V (V

(Note 1)

(Note 3)

= 10 µA (max) (V

TPCA8020-H

(Ta = 25°C)

DS (ON)

Symbol

DGR

GSS

DSS

stg

| = 15 S (typ.)

= 22 mΩ (typ.)

= 10 V, I

= 40 V)

−55 to 150

Rating

±20

150

7.5

2.8

1.6

7.5

1.9

= 1 mA)

Unit

°C

Weight: 0.066 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

0.95±0.05

1,2,3：SOURCE

5,6,7,8：DRAIN

0.5±0.1

1.27

4.25±0.2

0.05 S

5.0±0.2

TPCA8020-H

0.4±0.1

2-5Q1A

2006-11-17

⎯

4：GATE

0.8±0.1

1.1±0.2

0.05 M A

0.15±0.05

0.595

0.166±0.05

Unit: mm

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TPCA8020-H(TE12LQM Summary of contents

Page 1

... 150 °C ch −55 to 150 T °C stg 1 TPCA8020-H Unit: mm 0.4±0.1 1.27 0.5±0.1 0. 0.15±0. 0.595 5.0±0.2 A 0.95±0.05 0.166±0.05 0. 1.1±0 4.25±0 0.8±0.1 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN ⎯ JEDEC ⎯ JEITA TOSHIBA 2-5Q1A Weight: 0 ...

Page 2

... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 4.17 °C/W th (ch-c) R 44.6 °C/W th (ch-a) R 78.1 °C/W th (ch-a) b) Device mounted on a glass-epoxy board (b) FR-4 (Unit : mm) ( Ω 7 TPCA8020-H FR-4 25.4 × 25.4 × 0.8 (Unit : mm) 2006-11-17 ...

Page 3

... V、 V、 gs1 ∼ − 32 V、 V、 (Ta = 25°C) Test Condition — DRP DSF TPCA8020-H Min Typ. Max Unit ⎯ ⎯ µA ±10 ⎯ ⎯ µA 10 ⎯ ⎯ ⎯ ⎯ 25 ⎯ 1.1 2.3 V ⎯ mΩ ⎯ ...

Page 4

... Drain-source voltage V V 0.5 0.4 0.3 0.2 0 Gate-source voltage (ON) 100 10 1 100 0.1 1 Drain current I 4 TPCA8020-H I – Common source 3 25°C 3.6 Pulse test 3.4 3 2.6 V 1.2 1.6 2.0 (V) DS – Common source Ta = 25°C Pulse test ...

Page 5

... Common source Ta = 25°C Pulse test 10 1 0.1 −0.2 −0.4 160 0 Drain-source voltage V 2.5 2.0 C iss 1.5 1.0 C oss Common source 0.5 C rss Pulse test 0 −80 −40 100 0 Ambient temperature TPCA8020-H I – 4 −0.6 −0.8 −1.0 −1.2 ( – 120 160 C) ° 2006-11-17 ...

Page 6

... I D max (Continuous Opeation Tc = 25° Single - pulse Ta = 25°C Curves must be derated linearly with increase in temperature. V DSS max 0.1 0 Drain-source voltage V ( – Single - pulse 0 100 Pulse width t ( 160 0 40 Case temperature Tc ( 100 6 TPCA8020-H (2) (1) (3) 1000 – 120 160 C) ° 2006-11-17 ...

Page 7

... TPCA8020-H 2006-11-17 ...

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