TPCA8020-H(TE12LQM Toshiba, TPCA8020-H(TE12LQM Datasheet - Page 2

• Manufacturer Part Number: TPCA8020-H(TE12LQM
• Description: MOSFET N-CH 40V 7.5A SOP-8 ADV
• Manufacturer: Toshiba

Specifications of TPCA8020-H(TE12LQM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: 2-5Q1A
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.027 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Marking (Note 5)
Thermal resistance, channel to case
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2:
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: * Weekly code: (Three digits)
a)
Device mounted on a glass-epoxy board (a)
TPCA
8020-H
DD
= 24 V, T
Characteristic
※
(a)
ch
Week of manufacture
(01 for first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
= 25°C (initial), L = 0.5 mH, R
Type
Lot No.
25.4 × 25.4 × 0.8
(Tc=25°C)
(Note 2a)
(Note 2b)
(Unit : mm)
FR-4
R
R
R
Symbol
th (ch-c)
th (ch-a)
th (ch-a)
G
2
b)
= 25 Ω, I
Max
4.17
44.6
78.1
Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
°C/W
Unit
= 7.5 A
(b)
25.4 × 25.4 × 0.8
(Unit : mm)
FR-4
TPCA8020-H
2006-11-17