TPCA8010-H(TE12LQM Toshiba, TPCA8010-H(TE12LQM Datasheet - Page 2

• Manufacturer Part Number: TPCA8010-H(TE12LQM
• Description: MOSFET N-CH 200V 5.5A SOP-8 ADV
• Manufacturer: Toshiba

Specifications of TPCA8010-H(TE12LQM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 2-5Q1A
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Forward Transconductance Gfs (max / Min): 3.9 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 3.7 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Marking
Thermal resistance, channel to case
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5:
TPCA
8010-H
(Note 5)
* Weekly code: (Three digits)
DD
*
= 50 V, T
Characteristic
(a)
Type
Lot No.
ch
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
= 25°C (initial), L = 1mH, R
25.4 × 25.4 × 0.8
(Tc=25℃)
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
R
Symbol
th (ch-c)
th (ch-a)
th (ch-a)
G
= 25 Ω, I
2
2.78
44.6
78.1
Max
AR
(b) Device mounted on a glass-epoxy board (b)
°C/W
°C/W
°C/W
= 5.5 A
Unit
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCA8010-H
2009-12-21