2SK2231

Manufacturer Part Number2SK2231
DescriptionMOSFET N-CH 60V 5A 2-7B1B
ManufacturerToshiba
2SK2231 datasheet
 


Specifications of 2SK2231

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs160 mOhm @ 2.5A, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C5AVgs(th) (max) @ Id2V @ 1mA
Gate Charge (qg) @ Vgs12nC @ 10VInput Capacitance (ciss) @ Vds370pF @ 10V
Power - Max20WMounting TypeThrough Hole
Package / Case2-7B1BLead Free Status / RoHS StatusContains lead / RoHS non-compliant
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
4 V gate drive
Low drain-source ON-resistance
High forward transfer admittance
Low leakage current
: I
= 100 μA (max) (V
DSS
Enhancement mode
: V
= 0.8 to 2.0 V (V
th
Absolute Maximum Ratings
Characteristic
Drain-source voltage
Drain-gate voltage (R
= 20 kΩ)
GS
Gate-source voltage
DC (Note 1)
Drain current
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
= 25 V, T
= 25°C (initial), L = 7 mH, R
DD
ch
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
2SK2231
: R
= 0.12 Ω (typ.)
DS (ON)
: |Y
| = 5.0 S (typ.)
fs
= 60 V)
DS
= 10 V, I
= 1 mA)
DS
D
(Ta = 25°C)
Symbol
Rating
Unit
V
60
V
DSS
V
60
V
DGR
V
±20
V
GSS
I
5
A
D
I
20
A
DP
P
20
W
D
E
129
mJ
AS
I
5
A
AR
E
2
mJ
AR
T
150
°C
ch
T
−55 to 150
°C
stg
Symbol
Max
Unit
R
6.25
°C / W
th (ch−c)
R
125
°C / W
th (ch−a)
= 25 Ω, I
= 5 A
G
AR
1
2SK2231
2
−π−MOSV)
Unit: mm
6.5 ± 0.2
5.2 ± 0.2
0.6 MAX.
1.1 ± 0.2
0.8 MAX.
0.6 MAX.
1.05 MAX.
0.6 ± 0.15
1
2
3
2.3 ± 0.15
2.3 ± 0.15
2
1. GATE
1
2. DRAIN
(HEAT SINK)
3. SOURSE
3
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
2010-02-05

2SK2231 Summary of contents

  • Page 1

    ... Symbol Max Unit R 6.25 ° (ch−c) R 125 ° (ch− Ω 2SK2231 2 −π−MOSV) Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. 1.1 ± 0.2 0.8 MAX. 0.6 MAX. 1.05 MAX. 0.6 ± 0. 2.3 ± 0.15 2.3 ± 0. ...

  • Page 2

    ... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2SK2231 Min Typ. Max — — ...

  • Page 3

    ... 3 2SK2231 2010-02-05 ...

  • Page 4

    ... 4 2SK2231 2010-02-05 ...

  • Page 5

    ... Ω 2SK2231 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − ⎝ ⎠ VDSS DD 2010-02-05 ...

  • Page 6

    ... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK2231 2010-02-05 ...