2SK2231 Toshiba, 2SK2231 Datasheet - Page 2

• Manufacturer Part Number: 2SK2231
• Description: MOSFET N-CH 60V 5A 2-7B1B
• Manufacturer: Toshiba

Specifications of 2SK2231

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 370pF @ 10V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: 2-7B1B
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (gate-source
plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K2231
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Part No.
Lot No.
Note 4
(or abbreviation code)
(Note 1)
(Note 1)
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
V
t
Q
Q
t
DSF
DR
t
off
oss
t
on
rss
t
iss
rr
gs
gd
th
fs
r
f
g
rr
|
Note 4 : A line under a Lot No. identifies the indication of product Labels
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
V
V
I
V
V
V
V
V
V
I
I
D
DR
DR
GS
DS
DS
GS
GS
DS
DS
DD
= 10 mA, V
= 5 A, V
= 5 A, V
= 60 V, V
= 10 V, I
= 10 V, I
= 10 V, V
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
= ±16 V, V
= 4 V, I
= 10 V, I
≈ 48 V, V
D
GS
GS
2
(Ta = 25°C)
D
D
D
GS
Test Condition
GS
= 1.3 A
GS
GS
Test Condition
= 1 mA
= 2.5 A
DS
= 2.5 A
= 0 V
= 0 V, dI
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
—
—
DR
D
/ dt = 50 A/μs
= 5 A
Min
Min
0.8
3.0
60
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
Typ.
0.20
0.12
370
180
170
5.0
0.1
—
—
—
—
60
18
25
55
12
—
—
—
70
8
4
2010-02-05
2SK2231
Max
0.30
0.16
Max
−1.7
±10
100
2.0
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
Unit
Unit
μA
μA
nC
μC
pF
ns
ns
V
V
Ω
S
A
A
V