TPCA8A01-H(TE12L,Q Toshiba, TPCA8A01-H(TE12L,Q Datasheet - Page 5

• Manufacturer Part Number: TPCA8A01-H(TE12L,Q
• Description: MOSFET N-CH 30V 36A SOP8 ADV
• Manufacturer: Toshiba

Specifications of TPCA8A01-H(TE12L,Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.6 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 36A
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1970pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 2-5Q1A
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0056 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 36 A
• Power Dissipation: 2.8 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

10000
1000
100
12
10
50
40
30
20
10
−80
1
8
4
0
0
0.1
0
V DS = 24V
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
12
Common source
Pulse test
6
V GS = 4.5 V
V GS = 10 V
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Total gate charge Q
8
Dynamic input/output
Capacitance − V
0
1
characteristics
R
V GS
DS (ON)
16
40
V DD = 12 V
6
I D = 9A18A,36A
− Ta
24
I D = 9A18A,36A
80
10
g
DS
DS
Common source
I D = 36 A
Ta = 25°C
Pulse test
(nC)
32
(V)
C iss
120
24
C oss
C rss
100
160
40
20
16
12
8
4
0
5
1000
100
0.1
10
−80
3
2
1
0
1
0
10
−40
Drain-source voltage V
Ambient temperature Ta (°C)
−0.2
5
0
−0.4
I
DR
V
th
− V
40
− Ta
4.5
DS
−0.6
V GS = 0 V
80
DS
Common source
V DS = 10 V
I D = 1 mA
Pulse test
Common source
Ta = 25°C
Pulse test
TPCA8A01-H
−0.8
(V)
120
2010-01-19
−1.0
160