2SK1119(F) Toshiba, 2SK1119(F) Datasheet

2SK1119(F)

Manufacturer Part Number

2SK1119(F)

Description

MOSFET N-CH 1000V 4A TO-220AB

Manufacturer

Toshiba

Datasheets

1.2SK1119F.pdf (6 pages)

2.2SK1119F.pdf (5 pages)

Specifications of 2SK1119(F)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

3.8 Ohm @ 2A, 10V

Drain To Source Voltage (vdss)

1000V (1kV)

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

3.5V @ 1mA

Gate Charge (qg) @ Vgs

60nC @ 10V

Input Capacitance (ciss) @ Vds

700pF @ 25V

Power - Max

100W

Mounting Type

Through Hole

Package / Case

TO-220AB

Transistor Polarity

N Channel

Continuous Drain Current Id

Drain Source Voltage Vds

1kV

On Resistance Rds(on)

3.8ohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

3.5V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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DC−DC Converter and Motor Drive Applications

Absolute Maximum Ratings

Thermal Characteristics

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII

Pulse (Note 1)

= 20 kΩ)

: I

: V

(Note 1)

DSS

= 1.5 to 3.5 V (V

= 300 μA (max) (V

(Ta = 25°C)

Symbol

th (ch−c)

th (ch−a)

: R

: |Y

DGR

GSS

DSS

stg

DS (ON)

2SK1119

| = 2.0 S (typ.)

= 3.0 Ω (typ.)

= 10 V, I

−55 to 150

Rating

1000

Max

1.25

83.3

±20

100

150

= 800 V)

= 1 mA)

°C / W

Unit

°C

Weight: 2.0 g (typ.)

JEDEC

JEITA

TOSHIBA

TO-220AB

2-10P1B

SC-46

)

2009-09-29

2SK1119

Unit: mm

Related parts for 2SK1119(F)

2SK1119(F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

3 2SK1119 2009-09-29 ...

Page 4

4 2SK1119 2009-09-29 ...

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5 2SK1119 2009-09-29 ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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