2SK1119(F) Toshiba, 2SK1119(F) Datasheet

2SK1119(F)

Manufacturer Part Number

2SK1119(F)

Description

MOSFET N-CH 1000V 4A TO-220AB

Manufacturer

Toshiba

Datasheets

1.2SK1119F.pdf (6 pages)

2.2SK1119F.pdf (5 pages)

Specifications of 2SK1119(F)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

3.8 Ohm @ 2A, 10V

Drain To Source Voltage (vdss)

1000V (1kV)

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

3.5V @ 1mA

Gate Charge (qg) @ Vgs

60nC @ 10V

Input Capacitance (ciss) @ Vds

700pF @ 25V

Power - Max

100W

Mounting Type

Through Hole

Package / Case

TO-220AB

Transistor Polarity

N Channel

Continuous Drain Current Id

Drain Source Voltage Vds

1kV

On Resistance Rds(on)

3.8ohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

3.5V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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