2SK4108(F,T) Toshiba, 2SK4108(F,T) Datasheet - Page 3

• Manufacturer Part Number: 2SK4108(F,T)
• Description: MOSFET N-CH 500V 20A SC-67
• Manufacturer: Toshiba

Specifications of 2SK4108(F,T)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 3400pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
10
10
50
40
30
20
1
8
6
4
2
0
0
1
0
0
Common source
V DS = 20 V
Common source
Tc = 25°C
Pulse Test
Common source
V DS = 20 V
Pulse Test
Pulse Test
8
Tc = −55°C
Drain-source voltage V DS
Gate-source voltage V GS
1
2
Drain current I D (A)
10
100
2
4
I
I
|Y
D
D
25
– V
fs
25
– V
10
6
| – I
DS
GS
D
3
6
Tc = −55°C
100
V GS = 4V
(V)
(V)
4
8
5.5
5.25
5
4.5
100
10
5
3
1.0
0.1
20
16
12
20
16
12
8
4
0
8
4
0
1
0
0
10
8
Drain-source voltage V DS
10
Gate-source voltage V GS
4
Drain current I D (A)
R
20
6
V
8
DS (ON)
I
DS
D
5.75
– V
10
– V
5.5
DS
GS
30
– I
12
5.25
D
Common source
Tc = 25°C
Pulse Test
Pulse Test
Common source
Tc = 25°C
Common source
Tc = 25°C
V GS = 10 V
Pulse Test
5
4.5
V GS = 4 V
40
16
(V)
(V)
I D = 20 A
10
2009-09-29
5
2SK4108
100
20
50