2SK1381(F) Toshiba, 2SK1381(F) Datasheet

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2SK1381(F)

Manufacturer Part Number
2SK1381(F)
Description
MOSFET N-CH 100V 50A 2-16C1B
Manufacturer
Toshiba
Datasheet

Specifications of 2SK1381(F)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
32 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
88nC @ 10V
Input Capacitance (ciss) @ Vds
3700pF @ 10V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Relay Drive, Motor Drive and DC−DC Converter
Applications
Maximum Ratings
Thermal Characteristics
4-V gate drive
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
GS
DC
Pulse (Note 1)
= 20 kΩ)
(Ta = 25°C)
(Note 1)
: I
: V
DSS
th
= 0.8~2.0 V (V
= 100 μA (max) (V
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
T
I
T
DGR
P
GSS
DSS
I
DP
stg
D
ch
D
DS (ON)
2SK1381
fs
| = 33 S (typ.)
DS
= 25 mΩ (typ.)
= 10 V, I
−55~150
Rating
DS
0.833
Max
100
100
±20
200
150
150
50
50
1
= 100 V)
D
= 1 mA)
°C / W
°C / W
Unit
Unit
°C
°C
W
V
V
V
A
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
2
−π−MOSIII)
2-16C1B
2004-07-06
2SK1381
Unit: mm

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2SK1381(F) Summary of contents

Page 1

... TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L Relay Drive, Motor Drive and DC−DC Converter Applications 4-V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current : I DSS Enhancement mode : V th Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain− ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...

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3 2SK1381 2004-07-06 ...

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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...

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