AO3415A Alpha & Omega Semiconductor Inc, AO3415A Datasheet
AO3415A
Manufacturer Part Number
AO3415A
Description
MOSFET P-CH 20V 4A SOT23-3
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet
1.AO3415A.pdf
(5 pages)
Specifications of AO3415A
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
850mV @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Input Capacitance (ciss) @ Vds
940pF @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1193-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AO3415A
Manufacturer:
AOS
Quantity:
36 000
Part Number:
AO3415A
Manufacturer:
AOS/万代
Quantity:
20 000
Part Number:
AO3415A/A03415
Manufacturer:
ANALOGPOW
Quantity:
20 000
Part Number:
AO3415AL
Manufacturer:
AOS/万代
Quantity:
20 000
Part Number:
AO3415AS
Manufacturer:
AOS/万代
Quantity:
20 000
Rev 1: Feb 2011
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
The AO3415A uses advanced trench technology to
provide excellent R
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch applications.
General Description
D
B
Parameter
Top View
DS(ON)
C
G
T
T
T
T
A
A
A
A
=25° C
=70° C
=25° C
=70° C
, low gate charge and operation
SOT23
S
A
A D
A
=25° C unless otherwise noted
Bottom View
D
t ≤ 10s
Steady-State
Steady-State
S
Symbol
V
V
I
I
P
T
Symbol
www.aosmd.com
D
DM
J
DS
GS
D
G
, T
R
R
STG
JA
JL
V
I
R
R
R
ESD protected
Product Summary
D
DS
DS(ON)
DS(ON)
DS(ON)
(at V
Typ
65
85
43
(at V
(at V
(at V
GS
=-4.5V)
GS
GS
GS
Maximum
-55 to 150
= -2.5V)
= -4.5V)
= -1.8V)
-3.5
-20
-30
1.5
±8
-4
1
G
20V P-Channel MOSFET
Max
100
80
52
D
S
AO3415A
-20V
-4A
< 45m
< 54m
< 68m
Units
Units
° C/W
° C/W
° C/W
Page 1 of 5
° C
W
V
V
A
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AO3415A Summary of contents
Page 1
... General Description The AO3415A uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON) with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications. SOT23 Top View Bottom View Absolute Maximum Ratings T =25° C unless otherwise noted ...
Page 2
Electrical Characteristics (T =25° C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current ...
Page 3
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 -8V -4. (Volts) DS Fig 1: On-Region Characteristics (Note E) 100 V =-1. ...
Page 4
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-10V (nC) g Figure 7: Gate-Charge Characteristics 100.0 10.0 R DS(ON) limited 1.0 T =150°C 0.1 J(Max) T =25°C ...
Page 5
VDC + Vgs Vgs Vds - L Isd Rev 1: Feb 2011 Gate Charge Test Circuit & Waveform Vgs -10V - Vds VDC ...