AOD403 Alpha & Omega Semiconductor Inc, AOD403 Datasheet

MOSFET P-CH -30V -85A TO-252

AOD403

Manufacturer Part Number
AOD403
Description
MOSFET P-CH -30V -85A TO-252
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AOD403

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 20A, 20V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
85A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
5300pF @ 15V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1101-2

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Rev 7: June 2010
Absolute Maximum Ratings T
Parameter
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
D
D
The AOD403/AOI403 uses advanced trench technology
to provide excellent R
resistance. With the excellent thermal resistance of the
DPAK/IPAK package, this device is well suited for high
current load applications.
General Description
Top View
Top View
G
B
A
Parameter
G
G
C
TO252
TO252
DPAK
DPAK
C
T
T
T
T
T
T
T
T
DS(ON)
S
S
C
C
A
A
C
C
A
A
D
D
=25° C
=100° C
=25° C
=70° C
=25° C
=100° C
=25° C
=70° C
Bottom View
Bottom View
C
, low gate charge and low gate
A
A D
A
=25° C unless otherwise noted
t ≤ 10s
Steady-State
Steady-State
S
S
G
G
Symbol
Symbol
V
V
I
I
I
I
E
P
P
T
Symbol
www.aosmd.com
D
DM
DSM
AS
J
DS
GS
AS
D
DSM
, T
, I
R
R
, E
AR
Top View
Top View
STG
JA
JC
AR
V
I
R
R
100% UIS Tested
100% R
Product Summary
D
DS
DS(ON)
DS(ON)
(at V
G
G
TO251A
TO251A
Typ
1.5
D
D
15
41
IPAK
IPAK
(at V
(at V
GS
g
= -20V)
S
S
Tested
GS
GS
Maximum
Maximum
-55 to 175
= -20V)
= -10V)
-200
±25
125
-30
-70
-55
-15
-12
-50
2.5
1.6
Bottom View
Bottom View
75
38
AOD403/AOI403
30V P-Channel MOSFET
Max
20
50
S
S
2
D
D
G
G
G
G
-30V
-70A
< 6.2m
< 8m
Units
Units
Units
° C/W
° C/W
° C/W
Page 1 of 6
mJ
° C
W
W
V
V
A
A
A
D
D
S
S

Related parts for AOD403

AOD403 Summary of contents

Page 1

... General Description The AOD403/AOI403 uses advanced trench technology to provide excellent R , low gate charge and low gate DS(ON) resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. TO252 TO252 DPAK DPAK Top View ...

Page 2

... Ratings are based on low frequency and duty cycles to keep initial J(MAX) and case to ambient FR-4 board with 2oz. Copper still air environment with T www.aosmd.com AOD403/AOI403 Min Typ Max - =55° C ...

Page 3

... Figure 4: On-Resistance vs. Junction Temperature Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =-20A D 1.0E+01 40 1.0E+00 125°C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E- 0.0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AOD403/AOI403 125°C 125°C 25°C 25°C 2.5 2 3.5 3 4.5 4 5.5 5 (Volts) (Volts =-20V =-20V GS ...

Page 4

... Figure 10: Single Pulse Power Rating Junction-to- Figure 10: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 0.001 0.01 0.1 Pulse Width (s) www.aosmd.com AOD403/AOI403 C C iss iss C C oss oss (Volts) (Volts) ...

Page 5

... Figure 15: Single Pulse Power Rating Junction-to- Figure 15: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 Single Pulse 0.01 0.1 Pulse Width (s) www.aosmd.com AOD403/AOI403 100 100 125 125 150 150 175 175 ...

Page 6

... Vdd Vdd VDC VDC + + Vds Vds Vds Vds - Vgs Vdd VDC Id + Vgs Diode Recovery Test Circuit & Waveforms Vgs -Isd + Vdd VDC - -Vds www.aosmd.com AOD403/AOI403 Qg Qg Qgs Qgs Qgd Qgd Charge Charge t t off off d(off) d(off 90% 90% 10% 10 DSS ...

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