AOT414 Alpha & Omega Semiconductor Inc, AOT414 Datasheet

MOSFET N-CH 100V 43A TO-220

AOT414

Manufacturer Part Number
AOT414
Description
MOSFET N-CH 100V 43A TO-220
Manufacturer
Alpha & Omega Semiconductor Inc
Series
SDMOS™r
Datasheet

Specifications of AOT414

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
43A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
2200pF @ 50V
Power - Max
115W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1238-5
Rev0: February 2009
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
-RoHS Compliant
-AOT414L Halogen Free
The AOT414/L is fabricated with SDMOS
technology that combines excellent R
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well suited
for PWM, load switching and general purpose
applications.AOT414 and AOT414L are electrically
identical.
General Description
G
Top View
B
A
Parameter
C
C
T
T
T
T
T
T
T
T
C
C
A
A
C
C
A
A
=25°C
=70°C
=25°C
=70°C
=25°C
=100°C
=25°C
=100°C
D
TO220
G
A
A D
A
D
=25°C unless otherwise noted
Bottom View
S
t ≤ 10s
Steady-State
Steady-State
C
DS(ON)
TM
with low gate
trench
S
Symbol
V
V
I
I
I
I
E
P
P
T
Symbol
D
DM
DSM
AR
J
D
DS
GS
AR
D
DSM
www.aosmd.com
, T
G
R
R
STG
θJC
θJA
N-Channel SDMOS
Product Summary
V
I
R
R
100% UIS Tested
100% R
D
DS
DS(ON)
DS(ON)
(at V
11.6
Typ
0.7
54
(at V
GS
(at V
g
=10V)
Tested
GS
GS
Maximum
-55 to 175
=10V)
= 7V)
1.23
100
±25
100
115
5.6
4.5
1.9
43
31
28
39
58
Max
13.9
1.3
65
G
TM
Power Transistor
100V
43A
< 25mΩ
< 31mΩ
AOT414
D
S
Units
Units
°C/W
°C/W
°C/W
mJ
°C
W
W
Page 1 of 7
V
V
A
A
A

Related parts for AOT414

AOT414 Summary of contents

Page 1

... General Description The AOT414/L is fabricated with SDMOS technology that combines excellent R charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.AOT414 and AOT414L are electrically identical. -RoHS Compliant -AOT414L Halogen Free ...

Page 2

... FR-4 board with 2oz. Copper still air environment with T =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper =175°C. Ratings are based on low frequency and duty cycles to keep J(MAX) 2 FR-4 board with 2oz. Copper still air environment with T www.aosmd.com AOT414 Min Typ Max Units 100 10 T =55° ...

Page 3

... GS 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =20A D 1.0E+01 1.0E+00 125°C 1.0E-01 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AOT414 V =5V DS 125°C 25° (Volts =10V GS I =20A =15A 100 125 150 175 200 Temperature (° ...

Page 4

... DC 10ms 400 100 10 100 1000 0.0001 Figure 10: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse θJC 40 0.001 0.01 0.1 Pulse Width (s) www.aosmd.com AOT414 C iss oss C rss (Volts) DS Figure 8: Capacitance Characteristics T =175°C J(Max) T =25°C ...

Page 5

... Figure 15: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Single Pulse 1 10 Pulse Width (s) www.aosmd.com AOT414 50 75 100 125 150 175 T (°C) CASE T =25° 100 Pulse Width (s) Ambient (Note H) ...

Page 6

... Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 25º 25º 800 1000 0 200 Figure 20: Diode Reverse Recovery Time and www.aosmd.com AOT414 2 125ºC 1.6 1.2 25ºC 0.8 125ºC 0.4 25º ( =20A 4.5 s 125º 25ºC rr 2.5 2 1.5 125º ...

Page 7

... Vds + DUT Vdd VDC - Vgs Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 1 Vds + Vgs Vdd VDC - Id DUT Vgs Diode Recovery Test Circuit & Waveforms Vgs Isd + Vdd VDC - Vds www.aosmd.com AOT414 Qg Qgs Qgd Charge 90% 10 d(on) f d(off off Idt dI/dt I ...

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