2SK3479-Z-E1-AZ Renesas Electronics America, 2SK3479-Z-E1-AZ Datasheet
2SK3479-Z-E1-AZ
Specifications of 2SK3479-Z-E1-AZ
Related parts for 2SK3479-Z-E1-AZ
2SK3479-Z-E1-AZ Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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... DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Super low on-state resistance MAX DS(on MAX 4 DS(on)2 GS Low 11000 pF TYP. iss iss Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T Drain to Source Voltage ( Gate to Source Voltage (V ...
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... V iss oss MHz rss d(on d(off F(S- di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG Duty Cycle 1% ch Data Sheet D15077EJ1V0DS 2SK3479 MIN. TYP. MAX. UNIT 1 11000 pF 1100 pF 540 140 210 1 280 90 10% Wave Form 90% 90 10% 10 Wave Form ...
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... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 150 125 100 140 160 1000 10 m 100 Pulse Width - s Data Sheet D15077EJ1V0DS 2SK3479 100 120 140 160 T - Case Temperature - ˚ 83.3˚C/W th(ch- 1˚C/W th(ch-C) Single Pulse 100 1000 3 ...
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... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 16 75˚C 12 25˚C 40˚ 100 V GS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.0 2.5 2.0 1.5 1.0 0 1000 Data Sheet D15077EJ1V0DS 2SK3479 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE V = 4.5 V Pulsed Drain to Source Voltage - V DS Pulsed Gate to Source Voltage - ...
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... V - Source to Drain Voltage - V SD SWITCHING CHARACTERISTICS 1000 = iss 100 10 C oss rss G 1 0.1 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 160 120 100 Q Data Sheet D15077EJ1V0DS 2SK3479 0 V 1.5 1.0 0.5 t d(off) t d(on 100 I - Drain Current - 100 150 200 250 - Gate Charge - ...
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... SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 1000 100 100 Inductive Load - H 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140 120 100 Starting T - Starting Channel Temperature - ˚C ch Data Sheet D15077EJ1V0DS 2SK3479 100 125 150 ...
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... The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D15077EJ1V0DS 2SK3479 4.8 MAX. 1.3±0.2 0.5±0.2 2.8±0.2 1 ...
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... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 2SK3479 The M8E 00. 4 ...