2SK3479-Z-E1-AZ Renesas Electronics America, 2SK3479-Z-E1-AZ Datasheet - Page 5

• Manufacturer Part Number: 2SK3479-Z-E1-AZ
• Description: MOSFET 100V N-CH TO-263
• Manufacturer: Renesas Electronics America

Specifications of 2SK3479-Z-E1-AZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 83A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 11000pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
1000
100
120
100
0.1
10
80
60
40
20
1
0.1
0
FORWARD BIAS SAFE OPERATING AREA
T
Single Pulse
C
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
= 25˚C
20
V
1000
0.01
DS
100
0.1
10
T
1
40
- Drain to Source Voltage - V
1
10
C
I
D(DC)
- Case Temperature - ˚C
60
100
10
80
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
I
D(pulse)
100
1 m
A
120
100
= 25°C)
140
10 m
PW - Pulse Width - s
Data Sheet D15077EJ1V0DS
1000
160
100 m
1
150
125
100
75
50
25
0
10
20
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
40
C
Single Pulse
- Case Temperature - ˚C
100
60
80
1000
100
R
R
th(ch-A)
th(ch-C)
120
= 83.3˚C/W
= 1˚C/W
140
2SK3479
160
3