IRF614STRR Vishay, IRF614STRR Datasheet

MOSFET N-CH 250V 2.7A D2PAK

IRF614STRR

Manufacturer Part Number
IRF614STRR
Description
MOSFET N-CH 250V 2.7A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF614STRR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 1.6A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
2
D
PAK (TO-263)
G
G D
S
ORDERING INFORMATION
2
Package
D
PAK (TO-263)
IRF614SPbF
Lead (Pb)-free
SiHF614S-E3
IRF614S
SnPb
SiHF614S
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
a
Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting T
= 25 °C, L = 13 mH, R
DD
J
≤ 2.7 A, dI/dt ≤ 65 A/µs, V
≤ V
c. I
, T
SD
DD
DS
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91026
S-82997-Rev. A, 12-Jan-09
Power MOSFET
FEATURES
• Surface Mount
250
• Available in Tape and Reel
2.0
• Dynamic dV/dt Rating
8.2
• Repetitive Avalanche Rated
1.8
• Fast Switching
4.5
• Ease of Paralleling
Single
• Simple Drive Requirements
• Lead (Pb)-free Available
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
2
The D
PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
S
2
D
PAK (TO-263) is suitable for high current applications
N-Channel MOSFET
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
2
D
PAK (TO-263)
IRF614STRLPbF
SiHF614STL-E3
IRF614STRL
SiHF614STL
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
e
T
= 25 °C
A
for 10 s
= 25 Ω, I
= 2.7 A (see fig. 12).
G
AS
≤ 150 °C.
J
IRF614S, SiHF614S
Vishay Siliconix
device
design,
low
on-resistance
2
D
PAK (TO-263)
a
a
IRF614STRRPbF
a
a
SiHF614STR-E3
a
a
IRF614STRR
a
a
SiHF614STR
SYMBOL
LIMIT
V
250
DS
V
± 20
GS
2.7
I
D
1.7
I
8.0
DM
0.29
0.025
E
61
AS
I
2.7
AR
E
3.6
AR
36
P
D
3.1
dV/dt
4.8
T
, T
- 55 to + 150
J
stg
d
300
www.vishay.com
and
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
1

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IRF614STRR Summary of contents

Page 1

... T = 100 ° ° °C A for Ω 2.7 A (see fig. 12 ≤ 150 °C. J IRF614S, SiHF614S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF614STRRPbF a a SiHF614STR- IRF614STRR a a SiHF614STR SYMBOL LIMIT V 250 DS V ± 2 1.7 I 8.0 DM 0.29 0.025 2 3 3.1 dV/dt 4 ...

Page 2

... IRF614S, SiHF614S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Pulse Width ° 91026_03 = 25 °C C 3.0 2.5 2.0 4.5 V 1.5 1.0 0.5 20 µs Pulse Width T = 150 ° 91026_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRF614S, SiHF614S Vishay Siliconix 0 ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics ...

Page 4

... IRF614S, SiHF614S Vishay Siliconix 300 MHz iss 250 rss oss 200 150 100 Drain-to-Source Voltage ( 91026_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 2 125 Total Gate Charge (nC) 91026_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss 10 C oss C rss 1 91026_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91026 S-82997-Rev. A, 12-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF614S, SiHF614S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF614S, SiHF614S Vishay Siliconix 91026_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 140 Top 120 Bottom 100 125 25 75 100 50 Starting T , Junction Temperature (° 1.2 A 1.7 A 2.7 A 150 Current regulator Same type as D.U.T. ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91026. Document Number: 91026 S-82997-Rev ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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