IRF840STRL Vishay, IRF840STRL Datasheet - Page 3

• Manufacturer Part Number: IRF840STRL
• Description: MOSFET N-CH 500V 8A D2PAK
• Manufacturer: Vishay

Specifications of IRF840STRL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91071
S-81432-Rev. A, 07-Jul-08
91071_01
91071_02
Fig. 2 - Typical Output Characteristics, T
10
10
Fig. 1 - Typical Output Characteristics, T
10
10
0
1
1
0
10
10
Top
Bottom
0
Top
Bottom
0
V
V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
DS
DS ,
V
15 V
10 V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
GS
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
150 °C
25 °C
C
4.5 V
C
4.5 V
= 150 °C
= 25 °C
91071_03
91071_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
1
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
Fig. 3 - Typical Transfer Characteristics
- 60 - 40 - 20 0
I
V
D
150
GS
= 8.0 A
V
= 10 V
5
GS ,
°
25
C
T
Gate-to-Source Voltage (V)
°
IRF840S, SiHF840S
C
J ,
Junction Temperature (°C)
6
20 40 60 80 100 120 140 160
7
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
9
www.vishay.com
10
3