IRF840STRL Vishay, IRF840STRL Datasheet - Page 5

• Manufacturer Part Number: IRF840STRL
• Description: MOSFET N-CH 500V 8A D2PAK
• Manufacturer: Vishay

Specifications of IRF840STRL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 91071
S-81432-Rev. A, 07-Jul-08
91071_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
8.0
6.0
4.0
2.0
0.0
91071_11
25
10
10
0.1
10
-3
-2
1
10
50
-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
T
C
, Case Temperature (°C)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
10
-4
100
Single Pulse
(Thermal Response)
125
10
-3
t
1
150
, Rectangular Pulse Duration (S)
10
-2
0.1
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
1
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
IRF840S, SiHF840S
DS
t
r
j
= P
P
10
D.U.T.
DM
DM
Vishay Siliconix
R
x Z
D
t
t
1
d(off)
1
thJC
/t
2
t
+ T
2
t
f
10
C
+
-
www.vishay.com
2
V
DD
5