IRF7321D2 International Rectifier, IRF7321D2 Datasheet - Page 3

MOSFET P-CH 30V 4.7A 8-SOIC

IRF7321D2

Manufacturer Part Number
IRF7321D2
Description
MOSFET P-CH 30V 4.7A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7321D2

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
62 mOhm @ 4.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.7A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
710pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7321D2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7321D2TR
Manufacturer:
TI
Quantity:
3 046
www.irf.com
100
100
10
10
1
1
3.0
0.1
TOP
BOTTOM - 3.0V
-V
-V
3.5
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 15V
VGS
GS
DS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25°C
J
4.0
4.5
1
T = 150°C
J
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
Power Mosfet Characteristics
= -10V
5.0
-3.0V
5.5
6.0
10
A
A
100
10
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20
TOP
BOTTOM - 3.0V
I =
D
4.9A
-V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 15V
VGS
T , Junction Temperature ( C)
DS
J
, Drain-to-Source Voltage (V)
0
20 40 60 80 100 120 140 160
1
20µs PULSE WIDTH
T = 150°C
J
-3.0V
V
°
GS
=
10V
3
10
A

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