IRF7321D2 International Rectifier, IRF7321D2 Datasheet - Page 6

• Manufacturer Part Number: IRF7321D2
• Description: MOSFET P-CH 30V 4.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7321D2

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 62 mOhm @ 4.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7321D2

6
100
0.1
10
1
Fig. 12 - Typical Forward Voltage Drop
0.0
Forward Voltage Drop - V
Forward Voltage Drop - V
0.2
Characteristics
0.4
0.6
Schottky Diode Characteristics
T = 150°C
T = 125°C
T = 25°C
J
J
J
F
FM
(V)
0.8
(V)
1.0
Fig.14 - Maximum Allowable Ambient
Reverse Current Vs. Reverse Voltage
. 1
1
. 1
1
.1
1
160
140
120
100
80
60
40
20
0
Temp. Vs. Forward Current
Fig. 13 - Typical Values of
0.0
Average Forward Current - I
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
T = 50°C
J
0.5
Reverse Voltage - V (V)
25°C
25°C
00°C
75°C
50°C
1.0
1
1.5
2.0
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V = 80% Rated
R
Square wave
2
2.5
r
thJA
3.0
= 62.5°C/W
F(AV)
DC
3.5
(A)
3
4.0
A