IRF7321D2 International Rectifier, IRF7321D2 Datasheet - Page 4

• Manufacturer Part Number: IRF7321D2
• Description: MOSFET P-CH 30V 4.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7321D2

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 62 mOhm @ 4.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7321D2

4
100
1400
1200
1000
10
800
600
400
200
1
0.4
0
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
-V
V
0.6
SD
Drain-to-Source Voltage
DS
T = 150°C
J
Forward Voltage
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
C
GS
C
C
rss
iss
oss
0.8
10
T = 25°C
J
1.0
Power Mosfet Characteristics
1.2
V
GS
= 0V
100
1.4
A
A
100
10
1
20
16
12
Fig 8. Maximum Safe Operating Area
1
8
4
0
T
T
Single Pulse
0
C
J
I =
D
= 25 C
= 150 C
Fig 6. Typical Gate Charge Vs.
OPERATION IN THIS AREA LIMITED
-V
-4.9A
DS
°
Gate-to-Source Voltage
°
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
10
BY R
10
DS(on)
20
V
DS
=-15V
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30
100us
1ms
10ms
100
40