IRFR5505 International Rectifier, IRFR5505 Datasheet - Page 2

• Manufacturer Part Number: IRFR5505
• Description: MOSFET P-CH 55V 18A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR5505

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 57W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR5505

Electrical Characteristics @ T
IRFR/U5505
Notes:
Source-Drain Ratings and Characteristics
I
I
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
L
L
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
on
V
fs
D
S
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
g
gs
gd
SD
rr
(BR)DSS
Repetitive rating; pulse width limited by
Starting T
I
R
max. junction temperature. ( See fig. 11 )
T
SD
For recommended footprint and soldering techniques refer to application note #AN-994
J
G
= 25 , I
150°C
-9.6A, di/dt
/ T
J
J
Drain-to-Source Leakage Current
= 25°C, L = 3.2mH
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
AS
= -9.6A. (See Figure 12)
290A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
lead and center of die contact
This is applied for I-PAK, L
––– -0.049 –––
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
-55
4.2
Pulse width
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
–––
––– 0.11
–––
–––
––– -250
––– -100
–––
–––
–––
–––
650
270
120
–––
–––
–––
–––
110
4.5
12
28
20
16
7.5
51
–––
–––
-4.0
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
-1.6
-25
7.1
160
32
15
-64
-18
77
300µs; duty cycle
V/°C
nH
µA
nA
nC
ns
pF
nC
ns
V
V
S
A
V
S
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
and center of die contact
V
ƒ = 1.0MHz, See Fig. 5
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
D
D
of D-PAK is measured between
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
J
J
= -9.6A
= -9.6A
= 25°C, I
= 25°C, I
= 2.8
= 2.6
= -44V
= -28V
= 0V
= -25V
= 0V, I
= -10V, I
= V
= -25V, I
= -55V, V
= -44V, V
= 20V
= -20V
= -10V, See Fig. 6 and 13
2%.
GS
, I
D
See Fig. 10
S
F
D
Conditions
= -250µA
D
D
Conditions
= -9.6A, V
= -9.6A
GS
GS
= -250µA
= -9.6A
= -9.6A
= 0V
= 0V, T
D
= -1mA
GS
J
G
= 150°C
= 0V
G
S
+L
D
S
D
S
)
D