IRFR5505 International Rectifier, IRFR5505 Datasheet - Page 4

• Manufacturer Part Number: IRFR5505
• Description: MOSFET P-CH 55V 18A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR5505

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 57W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR5505

IRFR/U5505
100
0.1
10
1200
1000
1
800
600
400
200
0.2
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
-V
-V
T = 150 C
SD
0.6
J
DS
,Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
°
=
=
=
=
1.0
T = 25 C
0V,
C
C
C
J
C iss
C oss
C rss
gs
gd
ds
+ C
+ C
10
°
f = 1MHz
gd ,
gd
1.4
C
ds
V
SHORTED
1.8
GS
= 0 V
2.2
100
1000
100
10
20
16
12
1
8
4
0
1
0
Fig 8. Maximum Safe Operating Area
T
T
Single Pulse
I =
D
C
J
Fig 6. Typical Gate Charge Vs.
= 25 C
= 150 C
-V
-9.6A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
DS
°
Q , Total Gate Charge (nC)
°
, Drain-to-Source Voltage (V)
G
10
BY R
V
V
DS
DS
10
20
DS(on)
= -44V
= -28V
FOR TEST CIRCUIT
SEE FIGURE
30
10us
100us
1ms
10ms
13
100
40