IRFR5505 International Rectifier, IRFR5505 Datasheet - Page 3

• Manufacturer Part Number: IRFR5505
• Description: MOSFET P-CH 55V 18A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR5505

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 57W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR5505

Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
100
0.1
0.1
10
10
1
1
0.1
4
TOP
BOTTOM
-V
-V
5
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
6
1
T = 25 C
J
7
-4.5V
°
20µs PULSE WIDTH
V
20µs PULSE WIDTH
T = 25 C
DS
J
8
10
= -25V
T = 150 C
J
°
9
°
10
100
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
Fig 4. Normalized On-Resistance
100
10
-60 -40 -20
1
0.1
I =
D
TOP
BOTTOM
-16A
-V
T , Junction Temperature ( C)
Vs. Temperature
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
J
, Drain-to-Source Voltage (V)
0
20
1
IRFR/U5505
-4.5V
40
60 80 100 120 140 160
20µs PULSE WIDTH
T = 150 C
J
10
V
°
°
GS
=
-10V
100