IRFL4105 International Rectifier, IRFL4105 Datasheet - Page 2

• Manufacturer Part Number: IRFL4105
• Description: MOSFET N-CH 55V 3.7A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL4105

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFL4105

IRFL4105
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
I
I
V
t
Q
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
DSS
GSS
S
SM
d(on)
r
d(off)
f
rr
V
fs
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
2
Repetitive rating; pulse width limited by
V
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
DD
G
= 25 , I
= 25V, starting T
/ T
J
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
= 3.7A. (See Figure 12)
J
= 25°C, L = 16mH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
I
Pulse width
T
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
SD
Min. Typ. Max. Units
2.0
3.8
–––
55
–––
–––
–––
–––
J
150°C
3.7A, di/dt
0.058 –––
–––
–––
–––
–––
–––
–––
–––
660
230
–––
–––
120
––– 0.045
––– -100
9.8
7.1
3.4
23
12
19
12
99
55
–––
–––
250
–––
–––
–––
–––
–––
170
100
–––
–––
4.0
5.1
30
1.3
300µs; duty cycle
1.3
25
35
15
82
110A/µs, V
V/°C
nC
µA
nA
nC
ns
pF
ns
V
V
V
S
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
V
Reference to 25°C, I
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
T
di/dt = 100A/µs
V
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
DD
= 3.7A
= 3.7A
= 25°C, I
= 25°C, I
= 7.5
= 6.0
= 10V, I
= V
= 25V, I
= 55V, V
= 44V, V
= 44V
= 10V, See Fig. 6 and 13
= 28V
= 0V
= 25V
= 0V, I
= 20V
= -20V
2%.
V
GS
(BR)DSS
, I
D
See Fig. 10
S
F
D
D
D
Conditions
= 250µA
GS
GS
Conditions
= 3.7A, V
= 3.7A
= 250µA
= 1.9A
= 3.7A
,
= 0V
= 0V, T
D
= 1mA
GS
J
www.irf.com
= 150°C
= 0V