IRFL4105 International Rectifier, IRFL4105 Datasheet - Page 6

• Manufacturer Part Number: IRFL4105
• Description: MOSFET N-CH 55V 3.7A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL4105

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFL4105

IRFL4105
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
6
I
A S
R G
20 V
V D S
t p
I A S
t p
D .U .T
0 .01
L
V
(B R )D SS
1 5 V
D RIV E R
+
- V D D
A
3 0 0
2 5 0
2 0 0
1 5 0
1 0 0
5 0
0
2 5
Fig 12c. Maximum Avalanche Energy
V
D D
S tarting T , J unc tion T em perature (°C )
= 25 V
5 0
Vs. Drain Current
J
7 5
1 0 0
TO P
B O TTO M
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1 2 5
3 .0A
1 .7A
3.7 A
I
D
1 5 0
A