IRFL4105 International Rectifier, IRFL4105 Datasheet - Page 5

• Manufacturer Part Number: IRFL4105
• Description: MOSFET N-CH 55V 3.7A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL4105

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFL4105

www.irf.com
1 0 0 0
0 . 0 1
1 0 0
0.1
1 0
0 . 0 0 0 0 1
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
1
10V
12V
V
V
D = 0 .5 0
GS
G
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Same Type as D.U.T.
0 .0 5
0 .2 0
0 .1 0
0 .0 2
0 .0 1
Current Regulator
.2 F
Q
(T H E R M A L R E S P O N S E )
GS
0 . 0 0 0 1
S IN G L E P U L S E
50K
3mA
Current Sampling Resistors
.3 F
Q
Charge
I
Q
G
GD
G
0 . 0 0 1
D.U.T.
I
D
+
-
V
t , R e c ta n g u la r P u lse D u ra tio n (se c )
DS
1
0 . 0 1
0.1
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
90%
10%
V
1
DS
GS
R
Pulse Width
Duty Factor
G
10V
V
t
d(on)
GS
N o te s :
1 . D u ty fa c to r D = t
2 . P e a k T = P
V
1 0
DS
t
r
µs
J
D M
D.U.T.
1 0 0
IRFL4105
x Z
1
R
/ t
th J A
D
t
2
d(off)
P
D M
+ T
A
1 0 0 0
t
t
f
1
t
2
+
-
V
DD
1 0 0 0 0
5
A