IRF7601TR International Rectifier, IRF7601TR Datasheet

IRF7601TR

Manufacturer Part Number

IRF7601TR

Description

MOSFET N-CH 20V 5.7A MICRO8

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7601TR.pdf (8 pages)

Specifications of IRF7601TR

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

35 mOhm @ 3.8A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

5.7A

Vgs(th) (max) @ Id

700mV @ 250µA

Gate Charge (qg) @ Vgs

22nC @ 4.5V

Input Capacitance (ciss) @ Vds

650pF @ 15V

Power - Max

1.8W

Mounting Type

Surface Mount

Package / Case

Micro8™

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF7601TR
IRF7601
IRF7601CT

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Description

Absolute Maximum Ratings

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The new Micro8 package, with half the footprint area of the

standard SO-8, provides the smallest footprint available in

an SOIC outline. This makes the Micro8 an ideal device for

applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro8 will allow

it to fit easily into extremely thin application environments

such as portable electronics and PCMCIA cards.

Thermal Resistance

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

only for product marked with Date Code 505 or later .

dv/dt

@ T

Generation V Technology

Ultra Low On-Resistance

N-Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

Available in Tape & Reel

Fast Switching

STG

= 25°C

= 70°C

= 25°C

Maximum Junction-to-Ambient

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Parameter

@ 4.5V

T o p V ie w

Typ.

–––

-55 to + 150

HEXFET

Max.

± 12

Micro8

5.7

4.6

1.8

5.0

Max.

IRF7601

DS(on)

Power MOSFET

PD - 9.1261D

DSS

= 0.035

= 20V

mW/°C

°C/W

Units

V/ns

°C

8/25/97

Related parts for IRF7601TR

IRF7601TR Summary of contents

Page 1

... Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF7601 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTT OM 1. µ LSE W IDTH 1 °C J 0.1 0 Drain-to-Source V oltage ( ...

Page 4

IRF7601 1200 iss 1000 ...

Page 5

Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V . 3mA I G Current Sampling Resistors Fig 9b. Gate Charge ...

Page 6

IRF7601 D.U Reverse Recovery Current Re-Applied Voltage Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - dv/dt controlled by R Driver same type as ...

Page 7

Package Outline Micro8 Outline Dimensions are shown in millimeters (inches ...

Page 8

IRF7601 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches ...

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