IRF7324D1TR International Rectifier, IRF7324D1TR Datasheet - Page 3

• Manufacturer Part Number: IRF7324D1TR
• Description: MOSFET P-CH 20V 2.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7324D1TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

www.irf.com
100.0
1000
0.01
10.0
100
0.1
1.0
0.1
10
1
0.1
1.0
TOP
BOTTOM
-V DS , Drain-to-Source Voltage (V)
-V GS , Gate-to-Source Voltage (V)
2.0
VGS
-7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.0V
-1.5V
3.0
-1.5V
V DS = -10V
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
4.0
1
Power Mosfet Characteristics
T J = 25°C
5.0
T J = 150°C
6.0
10
7.0
100.0
10.0
1.0
0.1
100
0.1
10
1
0.4
0.1
TOP
BOTTOM
T J = 150°C
-V SD , Source-to-Drain Voltage (V)
0.6
-V DS , Drain-to-Source Voltage (V)
VGS
-7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.0V
-1.5V
-1.5V
0.8
T J = 25°C
1.0
≤ 60µs PULSE WIDTH
Tj = 150°C
1
IRF7324D1
1.2
V GS = 0V
1.4
3
1.6
10