IRF7324D1TR International Rectifier, IRF7324D1TR Datasheet - Page 6

• Manufacturer Part Number: IRF7324D1TR
• Description: MOSFET P-CH 20V 2.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7324D1TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7324D1
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Fig. 12 -Typical Forward Voltage Drop Characteristics
0.1
10
1
0.0
Forward Voltage Drop - V
Forward Votage Drop - V
0.2
0.4
0.6
Schottky Diode Characteristics
T = 150°C
T = 125°C
T = 25°C
J
J
J
FM
FM
0.8
(V)
(V)
1.0
.
Fig.14 - Typical Junction capacitance
. 1
1
. 1
1
.1
1
1
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
T = 50°C
J
Vs.Reverse Voltage
Reverse Voltage - V (V)
4
25°C
00°C
75°C
50°C
25°C
8
12
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