IRFZ44NSTRR International Rectifier, IRFZ44NSTRR Datasheet - Page 5

• Manufacturer Part Number: IRFZ44NSTRR
• Description: MOSFET N-CH 55V 49A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ44NSTRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1470pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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0.01
0.1
50
40
30
20
10
10
0.00001
Fig 9. Maximum Drain Current Vs.
0
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
150
t , Rectangular Pulse Duration (sec)
1
175
0.001
IRFZ44NS/IRFZ44NL
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
90%
10%
V
DS
GS
t
1. Duty factor D = t / t
2. Peak T = P
d(on)
R
Pulse Width
Duty Factor
Notes:
G
10V
V
GS
t
r
J
V
0.01
DS
µs
DM
x Z
1

thJC
P
2
D.U.T.
DM
t
+ T
d(off)
R
C
t
D
1
t
t
f
2
+
-
V
5
0.1
DD