IRL1104STRR International Rectifier, IRL1104STRR Datasheet
IRL1104STRR
Specifications of IRL1104STRR
Related parts for IRL1104STRR
IRL1104STRR Summary of contents
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... Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...
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IRL1104S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 100 10 2.7V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° T ...
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IRL1104S/L 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss 1000 ...
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LIMITED BY PACKAGE 100 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE ...
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IRL1104S 0 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G 4.5 ...
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D.U Driver Gate Drive P.W. D.U. Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFETS www.irf.com Peak Diode Recovery ...
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IRL1104S Pak Package Details 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 ...
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TO-262 Package Details Part Marking www.irf.com IRL1104S/L 9 ...
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IRL1104S Pak Tape and Reel IRE CTIO (. (. IRE C ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...